symbol v ds AON2801 v drain-source voltage -20 maximum units parameter dual p-channel enhancement mode field effect transi stor features v ds (v) = -20v i d = -3a (v gs = -4.5v) r ds(on) < 120m (v gs = -4.5v) r ds(on) < 160m (v gs = -2.5v) r ds(on) < 200m (v gs = -1.8v) general description the AON2801 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. rohs and halogen-free compliant g1 d1 s1 g2 d2 s2 dfn 2x2 package top bottom s1 g1 d2 s2 d1 g2 rev.3.0: october 2015 www.aosmd.com page 1 of 5 ds v gs i dm t j , t stg symbol typ max 35 45 65 85 120 155 175 235 maximum junction-to-ambient b t 10s r ja c/w maximum junction-to-ambient b steady-state c/w thermal characteristicsparameter units -3 w t a =70c 0.95 a t a =70c -2.3 v 8 gate-source voltagepulsed drain current c -15 continuous draincurrent a t a =25c i d junction and storage temperature range -55 to 150 c power dissipation a t a =25c p dsm 1.5 maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w rev.3.0: october 2015 www.aosmd.com page 1 of 5 downloaded from: http:///
AON2801 symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.3 -0.55 -1 v i d(on) -15 a 100 120 t j =125c 135 170 128 160 m 160 200 m g fs 6 s v sd -0.76 v i s -1 a c iss 540 700 pf c oss 90 pf c rss 63 pf r g 9.5 q g 5 6.5 nc q gs 1.2 nc q gd 1 nc gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-3a gate source chargegate drain charge maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-10v, f=1mhz output capacitancereverse transfer capacitance forward transconductance v ds =-5v, i d =-3a diode forward voltage i s =-1a,v gs =0v r ds(on) static drain-source on-resistance v gs =-4.5v, i d =-3a v gs =-2.5v, i d =-2.6a v gs =-1.8v, i d =-1.5a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-4.5v, v ds =-5v gate-body leakage current v ds =0v, v gs =8v drain-source breakdown voltage i d =-250 a, v gs =0v m electrical characteristics (t j =25c unless otherwise noted) i dss zero gate voltage drain current v ds =-20v, v gs =0v parameter conditions static parameters a rev.3.0: october 2015 www.aosmd.com page 2 of 5 q gd 1 nc t d(on) 5 ns t r 40 ns t d(off) 28.5 ns t f 46 ns t rr 21 28 ns q rr 9.1 nc -15 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery time i f =-3a, di/dt=100a/ s body diode reverse recovery charge i f =-3a, di/dt=100a/ s turn-on delaytime v gs =-4.5v, v ds =-10v, r l =1.5 , r gen =3 turn-on rise timeturn-off delaytime turn-off fall time gate drain charge a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 150 c may be used if the pcb allows it to. b. the value of r ja is measured with the device mounted on a minimum pa d board with 2oz. copper, in a still air environmen t with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 150 c may be used if the pcb allows it to. c. the r ja is the sum of the thermal impedence from junction t o case r jc and case to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. *this device is guaranteed green after data code 71 11 (oct 15 2007). rev.3.0: october 2015 www.aosmd.com page 2 of 5 downloaded from: http:///
AON2801 typical electrical and thermal characteristics 0 3 6 9 12 15 0 1 2 3 4 -i d (a) -v ds (volts) figure 1: on-region characteristics v gs =-1.5v -2.0v - 2.5v -4.5v - 3.0v 0 3 6 9 12 15 0 1 2 3 4 -i d (a) -v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds = - 5v 80 120 160 200 240 280 r ds(on) (m ) v gs =-1.8v v gs =-2.5v v gs =-4.5v 0.7 0.9 1.1 1.3 1.5 normalized on-resistance v gs =-1.8v i d =-1.5a v gs =-4.5v i d =-3a v gs =-2.5v i d =-2.6a rev.3.0: october 2015 www.aosmd.com page 3 of 5 -15 12 80 120 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs = - 4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.7 -50 -25 0 25 50 75 100 125 150 nor temperature (c) figure 4: on-resistance vs. junction temperature (note e) 80 120 160 200 240 280 320 0 2 4 6 8 r ds(on) (m ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-3a 25 c 125 c rev.3.0: october 2015 www.aosmd.com page 3 of 5 downloaded from: http:///
AON2801 typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 6 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 700 800 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 10 100 1000 10000 power (w) v ds =-10v i d =-3a t j(max) =150 c t a =25 c 0.01 0.10 1.00 10.00 100.00 -i d (amps) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 s 10s rev.3.0: october 2015 www.aosmd.com page 4 of 5 -15 12 1 10 0.000001 0.0001 0.01 1 100 10000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =85 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1 1 10 100 -v ds (volts) figure 9: maximum forward biased safe operating area (note e) dc rev.3.0: october 2015 www.aosmd.com page 4 of 5 downloaded from: http:///
AON2801 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v diode recovery test circuit & w aveform s vdc d ut vdd vgs vds vgs rl rg resistive switching test circuit & w aveform s - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) ig vgs - + vd c d ut l vgs isd vds - vds + di/dt r m rr vdd vdd q = - idt t rr -isd -vds f -i -i rev.3.0: october 2015 www.aosmd.com page 5 of 5 downloaded from: http:///
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